Transistor, Potencia, RF, FET, Canal N, 8 W, 7.5 Vcc
Transistor, Potencia, RF, FET, Canal N, 8 W, 7.5 Vcc
Disponible:
En Stock
- SKU MRF-1517-T1
- Categoria Radiocomunicación > Refacciones > Misceláneo
$ 874.82 MXN
The MRF1517T1 Transistor is designed for broadband commercial and industrial applications at frequencies up to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal common source amplifier applications in 7.5-volt portable FM equipment.
Performance specified @ 520 MHz, 7.5 Volts.
- Output power 8 Watts.
- Power gain 11dB.
- Efficiency - 55%.
- Characterized with series equivalent large signal impedance parameters.
- Excellent thermal stability.
- Capable of handling 20:1 VSWR, @ 9.5 VDC, 520 MHz, 2 dB overmodulation.
- RF power surface mount plastic package.
The MRF1517T1 Transistor is designed for broadband commercial and industrial applications at frequencies up to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal common source amplifier applications in 7.5-volt portable FM equipment.
Performance specified @ 520 MHz, 7.5 Volts.
- Output power 8 Watts.
- Power gain 11dB.
- Efficiency - 55%.
- Characterized with series equivalent large signal impedance parameters.
- Excellent thermal stability.
- Capable of handling 20:1 VSWR, @ 9.5 VDC, 520 MHz, 2 dB overmodulation.
- RF power surface mount plastic package.
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